EG 3356 Electronics I (same as PY 3313) - 3 semester hours
Physical properties of diodes and p-n junctions; Diode circuits; ; physical properties of Metal-Oxide Field Effect Transistors (MOSFET); amplification circuits using MOSFET; NMOS; PMOS and CMOS devices; physical properties of Junction Field Effect Transistors (JFET); electronic circuits using JFET; physical properties of Bipolar Junction Transistors (BJT); amplification circuits using BJT; switching circuits using cut off and saturation modes of BJT. Prerequisite: EG2352.